MTT-S Distinguished Microwave Lecturer 講演会のご案内
                            
　　　　　　　　　　　　　　　　　　　　　  　     IEEE MTT-S Japan Chapter Chair
　　　　　　　　　　　　　　　　　　　　　　　　    　　　　　　   　高山　洋一郎

下記によりIEEE MTT-S Distinguished Microwave Lecturer 講演会を開催いたします。今回の
DML講演者はトランジスタのRootモデルで有名なAgilent Technologies社のDavid Root氏です。
"Nonlinear Analog Behavioral Modeling of Microwave Devices and Circuits"に
ついてご講演を戴きます。皆様、多数のご参加をお願いいたします。

　　　　　　　　　　　　　　　　　記

事前登録のお願い：講演会参加ご希望の方は下記フォーマットにて　
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Dr. David Root 


Principle Research Scientist
Worldwide Process and Technology Centers  
Agilent Technologies
1400 Fountaingrove Parkway
Santa Rosa, CA 95403
USA


講演概要
Modern microwave systems are designed in a top-down hierarchical process, 
with specifications starting at the system level, propagating down towards
the subsystem, module, integrated circuit, and finally to the level of the 
transistor, resistor, and other fundamental electronic building blocks. 
A complimentary bottom-up process combines accurate representations of the 
building blocks at one level of abstraction to create or verify a functional 
block at the next higher level of design complexity. At a low level in the 
design hierarchy is the nonlinear device, or transistor. A detailed model, 
involving the simulation of the many coupled partial differential equations 
of physics is often needed to design such a device. However, one cannot 
simulate an entire IC at this physically detailed level. The complexity of 
the problem is overwhelming in terms of computer resources and time. Instead, 
for the purpose of integrated circuit design, transistor terminal (behavioral) 
characteristics can be abstracted into 'compact' nonlinear models (SPICE models) 
and their interaction simulated at the circuit level. Analogously, 
modern communication systems are sufficiently complex to preclude their 
complete simulation at the compact transistor model level of description. 
There are simply too many nonlinear equations to solve to make this practical. 
Instead, the input-output behavior of the ICs can be abstracted into 
functional block behavioral models, and the simulations done at the next 
higher abstraction level.  

This lecture introduces general concepts and specific techniques for effective 
(efficient, general, and accurate) nonlinear behavioral modeling of microwave 
semiconductor devices and functional circuit blocks. A behavioral model is a 
simplified but accurate model of a lower-level component in the design hierarchy 
that simulates efficiently at the next higher level of abstraction. A unified 
treatment at both the device and functional block level is a distinguishing 
feature of this presentation. So too is the application to behavioral models 
constructed from real measurements and also from simulations starting from a 
detailed (complex) model. The emphasis is placed on the combination of 
nonlinearity and dynamics. Nonlinearity includes harmonic and inter-modulation 
distortion, clipping, etc. Dynamics includes frequency-dependence and long-term 
memory effects from a variety of physical origins. In the realm of dynamic 
nonlinearities, insight from linear analysis cannot always be applied. 
Superposition is not generally valid, the Fourier domain is less useful, and 
Green functions don't exist. No fully general or overarching theories of 
nonlinear dynamical systems exist that are comparable to what exists for 
linear systems. Nevertheless, great progress has been made recently in 
nonlinear behavioral modeling. In fact, this lecture suggests we are at the 
threshold for full interoperability of large-signal measurement systems, 
modeling approaches, and simulation algorithms for nonlinear hierarchical 
behavioral modeling. This means we can begin to do for driven nonlinear 
microwave systems what small-signal S-parameters enable for linear systems.