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IEEE EDS Japan Chapter 会員各位
IEEE EDS Kansai Chapter 会員各位
IEEE Electron Devices Society Japan Chapter
Chair 木村 紳一郎
Vice Chair 鳥海 明
DL(Distinguished Lecturer)講演会のお知らせ
IEEE EDS Distinguished LecturerのProf. Xing Zhou
School of Electrical & Electronic Engineering
Nanyang Technological University,Singapore
による下記のDL講演会を開催致します。皆様のご参加を頂きたくご案内申し上げます。
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DL(Distinguished Lecturer)講演会のお知らせ
【日 時】平成23年8月26日(金)午後3時30分〜4時30分
【会 場】東京工業大学すずかけ台キャンパス
S2棟7階 会議室
(横浜市緑区長津田町4259、最寄り駅:東急田園都市線すずかけ台駅)
【講演者】Prof. Xing Zhou
School of Electrical & Electronic Engineering
Nanyang Technological University, Singapore
【タイトル】
" Unification of MOS Compact Models with the Unified Regional "
【概要】
This talk presents the motivation and philosophy behind the development of a compact model (Xsim) for unification of MOSFET models with the unified regional modeling (URM) approach. It is based on unified regional surface-potential solutions for bulk-MOS, which can be extended to generic double-gate (including SOI and nanowire) MOSFETs with common/independent-gate biasing and with/without body contact. The
DC/AC model is physically scalable in geometry/bias as well as in body thickness and doping, encompassing partial/full-depletion and volume/strong inversion. New paradigm shift in “ground-referencing” and “source/drain by label” provides complete Gummel symmetry while allowing physical modeling of asymmetric devices, which also provides easy extension to include contact effects for modeling pn-junction as well as Schottky-barrier (SB) and dopant-segregated Schottky (DSS) source/drain. The core model is directed towards modeling emerging devices and technologies in one unified framework without duplicating efforts, which also provides seamless transitions among various device structures and operations, with selectable accuracy for simulation and
verification of future-generation ULSI circuits.
<現地連絡先>
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東京工業大学 フロンティア研究機構
岩 井 洋
〒226-8502 横浜市緑区長津田町4259
Mail-Box:J2-68
TEL:045-924-5471
FAX:045-924-5584
E-mail:iwai.h.aa@m.titech.ac.jp
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