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       IEEE EDS Japan Chapter 会員各位

       IEEE EDS Kansai Chapter 会員各位

                               IEEE Electron Devices Society Japan Chapter

                                                          Chair 木村 紳一郎

                                                        Vice Chair 鳥海　明

DL(Distinguished Lecturer)講演会のお知らせ

IEEE EDS Distinguished LecturerのProf. Enrique Miranda (Universitat Autonoma de Barcelona)による下記のDL講演会を開催致します。

皆様のご参加を頂きたくご案内申し上げます。

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【日　時】平成23年9月21日（水）午後1時〜2時

【会　場】東京工業大学すずかけ台キャンパス

　　　　　S2棟7階　会議室

　　　（横浜市緑区長津田町4259、最寄り駅：東急田園都市線すずかけ台駅）

　　　　　キャンパス内地図は下記サイトをご参照下さい。

　　　　http://www.titech.ac.jp/about/campus/s_map.html　

【講演者】Prof. Enrique Miranda

(Escola d’Enginyeria, Universitat Autonoma de Barcelona, Barcelona, Spain)

【タイトル】

" Failure analysis of MOS devices using spatial statistics "

【概要】

When a MOS device is subjected to electrical stress traps or defects

are generated within the insulator layer, a process that ultimately

leads to the appearance of single or multiple breakdown spots

distributed over the device area. These events can be recognized

by their effects on the device conduction characteristics,

mainly in the I-t and I-V curves, and are sometimes visible

in the gate electrode as a 2D point pattern.

In this presentation, a number of methods currently used to

assess the breakdown spots location and their spatial distribution

in MOS transistors and capacitors are discussed.

Special emphasis is put on recently developed statistical tools for

point pattern analysis

because the same techniques can be used for failure analysis or defect

metrology in a wide variety of systems.

【略歴】

E.M. has received PhD degrees in Electronics Engineering and Physics

from Universitat Autonoma de Barcelona (UAB), Spain and Universidad de

Buenos Aires,

Argentina in 1999 and 2002, respectively. Since 2004,

he is Professor at the Escola d’Enginyeria-UAB.

Dr. Miranda has received research fellowships from: Spanish

International Cooperation Agency-AECI:

INTERCAMPUS (Universidad de Zaragoza) and MUTIS (UAB),

German Exchange Academic Agency-DAAD (Technical University

Hamburg-Harburg),

Ministerio de Ciencia y Tecnologia, Spain: RAMON y CAJAL (UAB),

Italian government (Universita degli Studi di Padova),

MATSUMAE Foundation (Tokyo Institute of Technology, Japan),

TAN CHIN TUAN (Nanyang Technological University, Singapore) and Science

Foundation Ireland:

WALTON Awards (Tyndall National Institute, Ireland).

He has authored and co-authored more than 90 papers in international

journals.

Dr. Miranda serves as Editorial Advisor of Microelectronics

Reliability-Elsevier

and is member of the Distinguished Lecturer program of the IEEE-Electron

Devices Society.

He has served on the technical committees of INFOS’07-’11, IRPS’08-’11

and ESREF’11.

He is also Visiting Scientist (09-11) at the National Comission of

Atomic Energy

(CNEA)-Argentina financially supported by the Abdus Salam International

Centre for Theoretical Physics,

Italy and Visiting Scientist (10-12) at the Indian Institute of

Technology (IIT)-Kharagpur, India.

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＜現地連絡先＞

 ---------------------------------

東京工業大学　フロンティア研究機構

岩　井　　　洋

〒226-8502　横浜市緑区長津田町4259

 Mail-Box：J2-68

 TEL:045-924-5471

 FAX:045-924-5584

 E-mail:iwai.h.aa@m.titech.ac.jp

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   IEEE EDS Japan Chapter連絡先:Secretary 鳥居　和功

   E-mail:kazuyoshi.torii@ieee.org

   Home page:http://www.ieee-jp.org/section/tokyo/chapter/ED-15/

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