IEEE Electron Devices Society ~Japan Joint Chapter~

A DL talk entitled "Improvement of characteristics of deep sub-micron CMOS devices with halo implantation and high-k dielectric" was given by Prof. Chandan K. Sarkar of Jadavpur University, Calcutta, India, at the Suzukakedai Campus of Tokyo Institute of Technology, Yokohama, Japan, on Nov. 28, 2006. The talk was followed by a lively discussion on the suppression of the short-channel effects and the potential of high-k materials between the lecturer and the audience. This DL meeting attended by 15 people was very meaningful.

On Dec. 20, 2006, a DL meeting was held at New Industry Creation Hatchery Center, Tohoku University, Sendai. Prof. Herzl Aharoni of Ben-Gurion University of the Negev, Israel, lectured on recent interesting technologies. The title of the lecture was "Two terminal and multi-terminal efficient planar silicon light emitting devices (Si-LED's) fabricated by standard IC technology as components for all-silicon monolithic integrated optoelectronic systems." The presentation offered an opportunity to get to grips with up-to-date, interesting and useful research. The meeting, with more than 30 participants, was a great success.

In addition, in the latter half of the year from July 2006 to Dec. 2006, ED Japan Chapter had 6 joint technical meetings with the Japan Society of Applied Physics, the Institute of Electronics, Information and Communication Engineers, etc.