IEEE Electron Devices Society ~Japan Joint Chapter~

ED Japan Chapter
- by Atsushi Kurobe, Chair

On Sept. 6, 2006, the DL meeting was held at Tokyo Institute of Technology, Yokohama. Two DLs gave lectures on recent interesting technologies. Prof. Hei Wong, who is from City University of Hong Kong, China, talked about the theoretical analysis of new High-K MOS gate dielectric films. The title of his lecture was "Band structure, barrier heights, carrier effective masses and current conduction in hafnium and zirconium oxide films." Prof. Cary Yang, who is from Santa Clara University, USA, talked about the physics and future applications of carbon nanofibers, in a lecture entitled “Carbon nanofibers as on-chip interconnect and thermal interface materials."　Both presentations offered the attendees the opportunity to get to grips with up-to-date, interesting and useful research.　The meeting, with 20 participants, was very successful.

In addition, EDS Japan Chapter organized a symposium entitled “Challenges and problems in Nano-CMOS technology toward the next 15 years” on Sept 11, 2006, at Waseda University in Tokyo. 17 speakers gave talks on technology trends, device, processes, material analysis, circuits and so on, which were all focused on the coming nanoelectronics era. The symposium concluded with a panel discussion. 6 panelists, who were Prof. H. Iwai (Tokyo Institute of Tech.), Prof. K. Natori (Tsukuba Univ.) and Prof. M. Koyanagi (Tohoku Univ.), Prof. K. Yamada (Waseda Univ), Prof. T. Hiramoto (Univ. of Tokyo) and Dr. T. Chikyo (National Institute for Materials Science), engaged in fruitful discussion on technologies 15 years from now. Topics were “What will be the main nanoelectronics devices?”, “Will emerging devices replace CMOS devices?” and “What should we do from now on to achieve nanoelectronics?.” The symposium was very successful with more than 80 participants.