IEEE EDS Kansai Chapter
第6回関西コロキアム・電子デバイスワークショップ・プログラム (PDF file)
2006年10月18日 (水)
大阪大学中之島センター 10Ｆ 佐治敬三メモリアルホール

開会挨拶 谷口研二(大阪大学) [10:00-10:10]

セッションIA．Silicon Materials and Device Technology [10:00-12:00]
座長：大村泰久（関西大学）

[10:10-10:50]
[Chapter of the year 2006記念講演]
#0 Fluorine Incorporation into HfSiON Dielectric for Vth Control and Its Impact on Reliability for Poly-Si Gate pFET
Masahiro Yoneda, M. Inoue, S. Tsujikawa, M. Mizutani, K. Nomura, T. Hayashi, K. Shiga, J. Yugami, J. Tsuchimoto, and Y. Ohno
(Renesas Technology)

[10:50-11:10]
#1 Study of Effects of Metal Layer on Hydrogen Desorption from Hydrogenated Amorphous Silicon Using Temperature-Programmed Desorption.
Y. Hamaoka, Hiromasa Ohmi, H. Kakiuchi and K. Yasutake
(Dept. of Precision Science and Technology, Graduate School of Eng., Osaka University)

[11:10-11:30]
#2 Impact of Body Bias Controlling in Partially Depleted SOI Devices with Hybrid Trench Isolation Technology
Toshiaki Iwamatsu, M. Tsujiuchi, Y. Hirano, T. Ikeda, F. Komatsu, T. Ipposhi, S. Maegawa and Y. Ohji
(Renesas Technology)

―昼食 [11:30-13: 10]―

セッションIB．Silicon Materials and Device Technology [13:10-13:50]
座長：渡辺博文（(株)リコー）

[13:10-13:30]
#3 Active Body-Biasing Control Technique for Bootstrap Pass-Transistor Logic on PD-SOI at 0.5V-VDD
Masaaki Iijima, M. Kitamura, K. Maegawa* Hamada, K.Fukuoka, M.Numa, A. Tada*, S.
(Kobe University , *Renesas Technology)

[13:30-13:50]
#4 Study of Factors Effecting Electron Tunneling Mechanism in Si Nanocrystals Floating Gate Memories
Prakaipetch Punchaipetch, K. Ichikawa, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, E. Takahashi, T. Hayashi, and K. Ogata
(Nara Institute of Science and Technology, Nissin Electric Co. Ltd)

―休憩 [13:50-14:00]―

セッションII．Compound Semiconductor Device Technology [14:00-14:40]
座長：松尾直人（兵庫県立大学）

[14:00-14:20]
#1 High Transconductance of 2.25 S/mm Observed at 16 K for 195-nm-Gate In0.75Ga0.25AsIn0.52/Al0.48As HEMT Fabricated on [411]-Oriented InP Substrate
Issei Watanabe, K. Shinohara, T. Kitada, S. Shimomura, Y. Yamashita, A. Endoh, T. Mimura, T. Matsui, S. Hiyamizu
(Osaka University)

[14:20-14:40]
#2 Source Resistance Reduction of AlGaN-GaN HFETs with Novel Superlattice Cap Layer
Tomohiro Murata, Hikita, Y. Hirose, Y.Uemoto, K.Inoue, T.Tanaka, D. Ueda
(Matsushita Electric Industry Co.)

―休憩 [14:40-14:50]―

セッションIII．Emerging Technology [14:50-16:35]
座長：小瀧浩（シャープ）

[14:50-15:10]
#1 Direct Ultrasensitive DNA Sensors Based on Carbon Nanotube Field-Effect Transistors
Kenzo Maehashi, K. Matsumoto, K. Kerman, Y. Takamura and E. Tamiya
(Osaka University, JAIST)

[15:10-15:30]
#2 Spintronics Based on ZnO Thin Films
Hitoshi Tabata, H. Saeki and H. Matui
(The Institute of Scientific and Industrial Research, Osaka University)

[15:30-15:50]
#3 Improvements in the Characteristics of Blue Polymer Light-emitting Diodes by Polymer Hole Transport Layer
Jian Li, T. Sano, Y. Hirayama, T. Tomita, H. Fujii, and K. Wakisaka
(SANYO Electric Co., Ltd.)

[15:50-16:10]
#4 Control of Spectral Photosensitivity in Stacked Color Sensors: Proposal and Theoretical Analysis
Noriyuki Kakimoto and Takahiro Numai
(Graduate School of Science and Engineering, Ritsumeikan University)

[16:15-17:00]
AWARD授与

―閉会― 谷口研二(大阪大学)