IEEE EDS Japan Chapter 会員各位
IEEE EDS Kansai Chapter 会員各位
IEEE Electron Devices Society Japan Chapter
Chair 木村 紳一郎
Vice Chair 鳥海 明
DL(Distinguished Lecturer)講演会のお知らせ
東北大学・学際科学国際高等研究センターにて筑波大学 数理物質科学研究科 白石賢二教授によるDL講演会が開催されます。DL講演会は参加費は無料,IEEE会員以外も出席可能です。皆様のご参加を頂きたくご案内申し上げます。
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日時: 11月27日(日) 13:00-14:00
講演者:白石賢二(筑波大学・数理物質科学研究科教授)
場所:東北大学・学際科学国際高等研究センター
講演タイトル:
Interface Physics and Its Approach to
Modern Devices
-A Computational Physics Approach-
内容:
Due to the great success of the first
principles calculations, we can obtain and predict the physical properties of
new materials by theoretical calculations. For example, surface reconstructions
can well be reproduced at the atomistic level by the first principles
calculations [1]. At present,first principles calculations have become one of
the most important tools for investigating various kinds of materials. This
situation is crucial for modern semiconductor nano-technologies in which
introduction of new materials are inevitable [2]. For example, Hf-based oxides
have been used as alternative gate dielectrics of conventional SiO2 and new
channel materials such as Ge and GaAs are expected as a promising candidate of
future Si nano devices. Further, carbon nanotubes and Si-nanowires are also
expected as key building blocks of future LSIs. The merit of the first
principles calculations is that we can obtain realistic images of wave
functions and detailed atomistic structures of new materials, which cannot be
obtained only through the experiments alone. This knowledge in addition to the
experimental finding enables us to construct useful concepts of modern
nano-technologies. Actually, New scientific findings obtained by computational
physics give great impact to modern semiconductor devices.
In this presentation, I will show the
examples which interface physics gives great impact to semiconductor devices,
such as MOSFET with high-k/metal-gate [3-5], guiding principles for MONOS type
memories [6],and proposal of operation mechanism of ReRAM [8].
[1] Zhu, Z., Shima, N. and Tsukada,
M.,(1989) Phys. Rev. B 40 11868. [2]Wilk, G. D, Wallace, R.M., Anthony, J.M.,
(2001) J. Appl. Phys. 89 5243. [3]Shiraihsi, K., et al. (2004): Tech. Dig. 2004
Symp. On VLSI Tech., Honolulu,USA, June, 2004, p.108. [4] Shiraishi, K.,et al.
(2004): Jpn. J. Appl.Phys. 43 L1413. [5] Akasaka, Y., et al. (2006): Jpn. J.
Appl. Phys. 45L1289. [6] Yamaguchi, K, et al. (2010): Tech. Dig. 2010 IEDM,
San-Francisco,USA, December,2010, p.122 [7] Kamiya, K. et al. Proc. of 1st
International Workshop on Resistive RAM, 2011, Leuven, Belgium, Nov. 2011.
Contact: Tetsuo Endoh
(endoh@riec.tohoku.ac.jp)
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